| PART |
Description |
Maker |
| 5082-2351 50822351 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE
From old datasheet system
|
Advanced Semiconductor, Inc.
|
| BAS3005B-02V |
Medium Power AF Schottky Diode
|
Infineon Technologies AG
|
| DME2333-230 |
SCHOTTKY MEDIUM BARRIER DIODE SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
Analog Devices, Inc.
|
| 5082-281805 |
MEDIUM BARRIER SCHOTTKY DIODE
|
http://
|
| 5082-2209 |
SCHOTTKY MEDIUM BARRIER DIODE
|
ASI[Advanced Semiconductor]
|
| MA4E1339 MA4E1339SERIES MA4E1339A-1141T MA4E1339E- |
20 V, Silicon medium barrier schottky diode
|
MA-Com
MACOM[Tyco Electronics]
|
| 5082-2818 50822818 |
MEDIUM BARRIER SCHOTTKY DIODE
From old datasheet system
|
http://
ASI[Advanced Semiconductor]
|
| CME7660-526-001 |
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
| NTLJF3118N NTLJF3118NTAG NTLJF3118NTBG |
Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package
|
ON Semiconductor
|
| BAT60B Q62702-A1189 BAT60 Q62702-A118 |
From old datasheet system
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply
|
SIEMENS[Siemens Semiconductor Group]
|
| IRF7526D1 IRF7526D1TR |
Co-packaged HEXFETò Power MOSFET and Schottky Diode
FETKYMOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V) FETKY⑩MOSFET
FETKY MOSFET & Schottky Diode(Vdss=-30V Rds(on)=0.20ohm Schottky Vf=0.39V)
FETKY MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)
FETKY⑩ MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
